AFN8028S Datasheet | Alfa-MOS

Description AFN8028S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Features - 80V/15A,RDS(ON)=8.0mΩ@VGS=10V - 80V/10A,RDS(ON)=11.5mΩ@VGS=4.5V - Super high density cell design for extremely low RDS (ON) - TO-252-2L package design Pin Description ( TO-252-2L ) Application - Motor and Load Control - Power Management in White LED System - Push Pull Converter - LCD TV Inverter & AD/DC Inverter Systems. Pin Define Pin 1 2 3 Symbol G S D Ordering Information Part Ordering No. Part Marking Package AFN8028ST252RG 8028S TO-252-2L ※ A Lot code ※ B Date code ※ AFN8028ST252RG : 13” Tape & Reel ; Pb- Free ; Halogen - Free ©Alfa-MOS Technology Corp. Rev.A May 2024 Description Gate Source Drain Unit Tape & Reel Quantity 2500 EA .alfa-mos. Page 1 Alfa-MOS Technology 80V N-Channel Enhancement Mode MOSFET Absolute Maximum Ratings(TA=25℃ Unless otherwise noted) Parameter...