AFN8028S Description
AFN8028S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications.
AFN8028S Key Features
- 80V/15A,RDS(ON)=8.0mΩ@VGS=10V
- 80V/10A,RDS(ON)=11.5mΩ@VGS=4.5V
- Super high density cell design for extremely low
- TO-252-2L package design
- Motor and Load Control
- Power Management in White LED System
- Push Pull Converter
- LCD TV Inverter & AD/DC Inverter Systems