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AFN8028S - 80V N-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the AFN8028S, a member of the AFN8028S-Alfa 80V N-Channel Enhancement Mode MOSFET family.

Description

AFN8028S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • 80V/15A,RDS(ON)=8.0mΩ@VGS=10V.
  • 80V/10A,RDS(ON)=11.5mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS (ON).
  • TO-252-2L package design Pin.

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Datasheet preview – AFN8028S

Datasheet Details

Part number AFN8028S
Manufacturer Alfa-MOS
File Size 484.60 KB
Description 80V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFN8028S Datasheet
Additional preview pages of the AFN8028S datasheet.

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Full PDF Text Transcription

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Alfa-MOS Technology AFN8028S 80V N-Channel Enhancement Mode MOSFET General Description AFN8028S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Features  80V/15A,RDS(ON)=8.0mΩ@VGS=10V  80V/10A,RDS(ON)=11.5mΩ@VGS=4.5V  Super high density cell design for extremely low RDS (ON)  TO-252-2L package design Pin Description ( TO-252-2L ) Application  Motor and Load Control  Power Management in White LED System  Push Pull Converter  LCD TV Inverter & AD/DC Inverter Systems. Pin Define Pin 1 2 3 Symbol G S D Ordering Information Part Ordering No.
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