AFN8206WS Description
AFN8206WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( DFN2X3-6L ) AFN8206WS 20V N-Channel Enhancement Mode MOSFET.
AFN8206WS Key Features
- ID=3.0A,RDS(ON)=11mΩ@VGS=4.5V
- ID=3.0A,RDS(ON)=13mΩ@VGS=2.5V
- ID=2.5A,RDS(ON)=24mΩ@VGS=1.8V
- Super high density cell design for extremely
- DFN2X3-6L package design
- Load Switch
- Portable Equipment
- Battery Powered System