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AFN8206WS - 20V N-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the AFN8206WS, a member of the AFN8206WS-Alfa 20V N-Channel Enhancement Mode MOSFET family.

Description

AFN8206WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • ID=3.0A,RDS(ON)=11mΩ@VGS=4.5V.
  • ID=3.0A,RDS(ON)=13mΩ@VGS=2.5V.
  • ID=2.5A,RDS(ON)=24mΩ@VGS=1.8V.
  • Super high density cell design for extremely low RDS (ON).
  • ESD Protection ( 2KV ) Diode design.
  • in.
  • DFN2X3-6L package design.

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Datasheet preview – AFN8206WS

Datasheet Details

Part number AFN8206WS
Manufacturer Alfa-MOS
File Size 467.48 KB
Description 20V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFN8206WS Datasheet
Additional preview pages of the AFN8206WS datasheet.

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Full PDF Text Transcription

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Alfa-MOS Technology General Description AFN8206WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( DFN2X3-6L ) AFN8206WS 20V N-Channel Enhancement Mode MOSFET Features  ID=3.0A,RDS(ON)=11mΩ@VGS=4.5V  ID=3.0A,RDS(ON)=13mΩ@VGS=2.5V  ID=2.5A,RDS(ON)=24mΩ@VGS=1.
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