AFN8206WS Datasheet | Alfa-MOS

Description AFN8206WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( DFN2X3-6L ) 20V N-Channel Enhancement Mode MOSFET Features - ID=3.0A,RDS(ON)=11mΩ@VGS=4.5V - ID=3.0A,RDS(ON)=13mΩ@VGS=2.5V - ID=2.5A,RDS(ON)=24mΩ@VGS=1.8V - Super high density cell design for extremely low RDS (ON) - ESD Protection ( 2KV ) Diode design- in - DFN2X3-6L package design Application - Load Switch - Portable Equipment - Battery Powered System Pin Define Pin 1 2 3 4 5 6 Symbol S1 S1 G1 G2 S2 S2 Description Source1 Source1 Gate1 Gate2 Source2 Source2 Ordering Information Part Ordering No. Part Marking Package AFN8206WSFN236RG W06YW DFN2X3-6L ※ W06 parts code ※ Y year code ※ W week code ※ AFN8206WSFN236RG : 7” Tape & Reel ; Pb- Free ; Halogen- Free Unit Tape & Reel Quantity 4000 EA ©Alfa-MOS Technology Corp. Rev.E Dec. 2020 .alfa-mos. Page 1 Alfa-MOS Technology 20V N-Channel Enhancement Mode...