AFP1913E mosfet equivalent, p-channel mosfet.
z -20V/-0.6A, RDS(ON)= 580 mΩ@ VGS =-4.5V z -20V/-0.5A, RDS(ON)= 780 mΩ@ VGS =-2.5V z -20V/-0.4A, RDS(ON)= 980 mΩ@ VGS =-1.8V z Low Offset (Error) Voltage z Low-Voltage O.
Pin Description ( SOT-363 )
AFP1913E
20V P-Channel Enhancement Mode MOSFET
Features
z -20V/-0.6A, RDS(ON)= 580 mΩ@ VGS.
AFP1913E, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer, and low in-.
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