AFP1933 Datasheet, Alfa-MOS

-30V/-0.55A, R =DS(ON) 900 mΩ@ VGS =-10V -30V/-0.35A, R =DS(ON) 1000 mΩ@ VGS =-4.5V -30V/-0.15A, R =DS(ON) 1800 mΩ@ VGS =-2.5V Low Offset (Error) Voltage Low-Voltage Oper.

Pin Description ( SOT-363 ) AFP1933 30V P-Channel Enhancement Mode MOSFET Features -30V/-0.55A, R =DS(ON) 900 mΩ@ VGS .

AFP1933, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer, and low in-l.