AFP2317 Datasheet - Alfa-MOS

P-Channel Enhancement Mode MOSFET

AFP2317 Features

* -40V/-3.6A,RDS(ON)=52mΩ@VGS=-10.0V -40V/-3.2A,RDS(ON)=67mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design Application Power Management in Note book LED Display DC-DC System LCD Panel Pin Defin

AFP2317 General Description

AFP2317, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Descriptio.

AFP2317 Datasheet (556.67 KB)

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AFP2317

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Alfa-MOS

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556.67 KB

Description:

P-channel enhancement mode mosfet.

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AFP2317 P-Channel Enhancement Mode MOSFET Alfa-MOS

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AFP2317 Features

AFP2317 General Description

Datasheet Details

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