AFP2325S Datasheet, Alfa-MOS

-150V/-1.4A,RDS(ON)=745mΩ@VGS=-10V -150V/-1.0A,RDS(ON)=800mΩ@VGS=-6V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC cu.

Pin Description ( SOT-23-3L ) AFP2325S 150V P-Channel Enhancement Mode MOSFET Features -150V/-1.4A,RDS(ON)=745mΩ@VGS=-.