AFP3481S mosfet equivalent, p-channel mosfet.
-30V/-5.4A,RDS(ON)=62mΩ@VGS=-10.0V -30V/-4.2A,RDS(ON)=90mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC cu.
Pin Description ( TSOT-23-6L )
AFP3481S
30V P-Channel Enhancement Mode MOSFET
Features
-30V/-5.4A,RDS(ON)=62mΩ@VGS=-10.
AFP3481S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.
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