AFP3481S - P-Channel MOSFET

This page provides the datasheet information for the AFP3481S, a member of the AFP3481S-Alfa P-Channel MOSFET family.

Product Overview

Alfa-MOS

Datasheet Details

Part number	AFP3481S
Manufacturer	Alfa-MOS
File Size	644.27 KB
Description	P-Channel MOSFET
Datasheet	AFP3481S Datasheet
Additional preview pages of the AFP3481S datasheet.

AFP3481S Product details

Description

AFP3481S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

-30V/-5.4A,RDS(ON)=62mΩ@VGS=-10.0V -30V/-4.2A,RDS(ON)=90mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TSOT-23-6L package design.

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Other Datasheets by Alfa-MOS

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Published: Dec 1, 2018 |