AFP3993 mosfet equivalent, p-channel mosfet.
-30V/-3.6A,RDS(ON)=150mΩ@VGS=-10.0V -30V/-3.2A,RDS(ON)=235mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC .
Pin Description ( TSOP-6 )
AFP3993
30V P-Channel Enhancement Mode MOSFET
Features
-30V/-3.6A,RDS(ON)=150mΩ@VGS=-10.0V .
AFP3993, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial ind.
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