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AFP6801 Datasheet - Alfa-MOS

P-Channel MOSFET

AFP6801 Features

* -30V/-3.8A,RDS(ON)=135mΩ@VGS=-10.0V -30V/-2.8A,RDS(ON)=175mΩ@VGS=-4.5V -30V/-1.8A,RDS(ON)=245mΩ@VGS=-2.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TSOP-6 package design Application Power Management in Note book Portable Eq

AFP6801 General Description

AFP6801, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss .

AFP6801 Datasheet (581.16 KB)

Preview of AFP6801 PDF

Datasheet Details

Part number:

AFP6801

Manufacturer:

Alfa-MOS

File Size:

581.16 KB

Description:

P-channel mosfet.

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AFP6801 P-Channel MOSFET Alfa-MOS

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