Datasheet4U Logo Datasheet4U.com

AFP7001KAS - 60V P-Channel MOSFET

Download the AFP7001KAS datasheet PDF. This datasheet also covers the AFP7001KAS-Alfa variant, as both devices belong to the same 60v p-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

AFP7001KAS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Key Features

  • ID=-0.5A,RDS(ON)=5Ω@VGS=-10V.
  • ID=-0.1A,RDS(ON)=6Ω@VGS=-4.5V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • ESD Protection Diode design.
  • in.
  • SOT-23 package design.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AFP7001KAS-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AFP7001KAS
Manufacturer Alfa-MOS
File Size 422.30 KB
Description 60V P-Channel MOSFET
Datasheet download datasheet AFP7001KAS Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
AFP02N8-000 General Purpose PHEMT Chip Alpha Industries
AFP02N8-212 General Purpose Packaged PHEMT Chips Alpha Industries
AFP02N8-213 General Purpose Packaged PHEMT Chips Alpha Industries
AFP2303AS23RG P-Channel MOSFET VBsemi
AFP2319AS23RG P-Channel MOSFET VBsemi

Other Datasheets by Alfa-MOS

Part Number Description
AFP7113WS P-Channel MOSFET
AFP7117WS 150V P-Channel MOSFET
AFP7119WS 200V P-Channel Enhancement Mode MOSFET
AFP7127S P-Channel MOSFET
AFP7129S 60V P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Alfa-MOS Technology General Description AFP7001KAS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-23 ) AFP7001KAS 60V P-Channel Enhancement Mode MOSFET Features  ID=-0.5A,RDS(ON)=5Ω@VGS=-10V  ID=-0.1A,RDS(ON)=6Ω@VGS=-4.5V  Super high density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  ESD Protection Diode design–in  SOT-23 package design Application  Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories, Transistors, etc.