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AFP7949AS - Dual P-Channel MOSFET

Download the AFP7949AS datasheet PDF. This datasheet also covers the AFP7949AS-Alfa variant, as both devices belong to the same dual p-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

AFP7949AS, Dual P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS (ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Key Features

  • z -60V/-5.0A,RDS(ON)= 62mΩ@VGS= -10V z -60V/-4.5A,RDS(ON)= 72mΩ@VGS= -4.5V z Super high density cell design for extremely low RDS (ON) z DFN 5X6-8L package design.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AFP7949AS-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AFP7949AS
Manufacturer Alfa-MOS
File Size 543.98 KB
Description Dual P-Channel MOSFET
Datasheet download datasheet AFP7949AS Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Alfa-MOS Technology AFP7949AS 60V Dual P-Channel Enhancement Mode MOSFET General Description AFP7949AS, Dual P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS (ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( DFN5X6-8L ) Features z -60V/-5.0A,RDS(ON)= 62mΩ@VGS= -10V z -60V/-4.5A,RDS(ON)= 72mΩ@VGS= -4.