AFP7923WS Datasheet | Alfa-MOS

Description AFP7923WS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook puter and other battery powered circuits, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( DFN3X3-8L ) Features -30V/-8A,RDS(ON)=55mΩ@VGS=10V -30V/-6A,RDS(ON)=75mΩ@VGS=4.5V -30V/-4A,RDS(ON)=95mΩ@VGS=-2.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability DFN3X3-8L package design Application DC/DC Conversion Load Switch DC FAN Pin Define Pin 1 2 3 4 5 6 7 8 Symbol S1 G1 S2 G2 D2 D2 D1 D1 Description Source 1 Gate 1 Source 2 Gate 2 Drain 2 Drain 2 Drain 1 Drain 1 Ordering Information Part Ordering No. Part Marking Package Unit...