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AFP7923WS - P-Channel MOSFET

This page provides the datasheet information for the AFP7923WS, a member of the AFP7923WS-Alfa P-Channel MOSFET family.

Description

AFP7923WS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Features

  • -30V/-8A,RDS(ON)=55mΩ@VGS=10V -30V/-6A,RDS(ON)=75mΩ@VGS=4.5V -30V/-4A,RDS(ON)=95mΩ@VGS=-2.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability DFN3X3-8L package design.

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Datasheet Details

Part number AFP7923WS
Manufacturer Alfa-MOS
File Size 601.45 KB
Description P-Channel MOSFET
Datasheet download datasheet AFP7923WS Datasheet
Additional preview pages of the AFP7923WS datasheet.

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Full PDF Text Transcription

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Alfa-MOS Technology AFP7923WS 30V P-Channel Enhancement Mode MOSFET General Description AFP7923WS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( DFN3X3-8L ) Features -30V/-8A,RDS(ON)=55mΩ@VGS=10V -30V/-6A,RDS(ON)=75mΩ@VGS=4.5V -30V/-4A,RDS(ON)=95mΩ@VGS=-2.
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