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AFP7949AS - Dual P-Channel MOSFET

This page provides the datasheet information for the AFP7949AS, a member of the AFP7949AS-Alfa Dual P-Channel MOSFET family.

Description

AFP7949AS, Dual P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS (ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • z -60V/-5.0A,RDS(ON)= 62mΩ@VGS= -10V z -60V/-4.5A,RDS(ON)= 72mΩ@VGS= -4.5V z Super high density cell design for extremely low RDS (ON) z DFN 5X6-8L package design.

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Datasheet Details

Part number AFP7949AS
Manufacturer Alfa-MOS
File Size 543.98 KB
Description Dual P-Channel MOSFET
Datasheet download datasheet AFP7949AS Datasheet
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Alfa-MOS Technology AFP7949AS 60V Dual P-Channel Enhancement Mode MOSFET General Description AFP7949AS, Dual P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS (ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( DFN5X6-8L ) Features z -60V/-5.0A,RDS(ON)= 62mΩ@VGS= -10V z -60V/-4.5A,RDS(ON)= 72mΩ@VGS= -4.
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