AFP7949AS Datasheet | Alfa-MOS

Description AFP7949AS, Dual P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS (ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( DFN5X6-8L ) Features z -60V/-5.0A,RDS(ON)= 62mΩ@VGS= -10V z -60V/-4.5A,RDS(ON)= 72mΩ@VGS= -4.5V z Super high density cell design for extremely low RDS (ON) z DFN 5X6-8L package design Application z Motor and Load Control z Backlight Inverter for LCD Display z Full Bridge DC/DC Converter Pin Define Pin 1 2 3 4 5 6 7 8 Symbol S1 G1 S2 G2 D2 D2 D1 D1 Description Source 1 Gate 1 Source 2 Gate 2 Drain 2 Drain 2 Drain 1 Drain 1 Ordering Information Part Ordering No. Part Marking Package AFP7949ASFN568RG 7949AS DFN 5X6-8L ※ 7949AS : Parts Code ※ YYMMDD : Date Code ※...