Datasheet Details
| Part number | AO3415 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 303.81 KB |
| Description | 20V P-Channel MOSFET |
| Download | AO3415 Download (PDF) |
|
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| Part number | AO3415 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 303.81 KB |
| Description | 20V P-Channel MOSFET |
| Download | AO3415 Download (PDF) |
|
|
|
The AO3415 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.
This device is suitable for use as a load switch applications.
Product Summary VDS ID (at VGS=-4.5V) RDS(ON) (at VGS= -4.5V) RDS(ON) (at VGS= -2.5V) RDS(ON) (at VGS= -1.8V) ESD protected -20V -4A < 41mΩ < 53mΩ < 65mΩ SOT23 Top View Bottom View D D G S G S Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation B C Maximum -20 ±8 -4 -3.5 -30 1.5 1 -55 to 150 Units V V A VGS TA=25° C TA=70° C TA=25° C TA=70° C ID IDM PD TJ, TSTG W ° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 65 85 43 Max 80 100 52 Units ° C/W ° C/W ° C/W Rev 7: Sep 2011 www.aosmd.com Page 1 of 5 Free Datasheet http://www.datasheet4u.com/ AO3415 Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=-250µA, VGS=0V VDS=-20V, VGS=0V C TJ=55° VDS=0V, VGS= ±8V VDS=VGS, ID=-250µΑ VGS=-4.5V, VDS=-5V VGS=-4.5V, ID=-4A TJ=125° C RDS(ON) Static Drain-Source On-Resistance VGS=-2.5V, ID=-4A VGS=-1.8V, ID=-2A VGS=-1.5V, ID=-1A gFS VSD IS Forward Transconductance Diode Forward Voltage VDS=-5V, ID=-4A IS=-1A,VGS=0V -0.3 -30 34 49 42 52 61 20 -0.64 -1 -2 600 VGS=0V, VDS=-10V, f=1MHz VGS=0V, VDS=0V, f=1MHz 80 48 6 7.4 VGS=-4.5V, VDS=-10V, ID=-4A 0.8 1.3 VGS=-4.5V, VDS=-10V, RL=2.5Ω, RGEN=3Ω IF=-4A, dI/dt=500A/µs 20 40 751 115 80 13 9.3 1 2.2 13 9 19 29 26 51 32 62 905 150 115 20 11 1.2 3.1 41 59 53 65 -0.57 Min -20 -1 -5 ±10 -0.9 Typ Max Units V µA µA V A mΩ mΩ mΩ mΩ S V A pF pF pF Ω nC nC nC ns ns ns ns ns nC STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS IGSS VGS(
AO3415 20V P-Channel MOSFET General.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
AO3415 | P-Channel MOSFET | Kexin |
 |
AO3415 | P-Channel MOSFET | VBsemi |
 |
AO3415 | P-Channel Enhancement-Mode MOSFET | HAOHAI |
|
AO3415A | P-Channel MOSFET | Kexin |
|
AO3415A | P-Channel MOSFET | VBsemi |
| Part Number | Description |
|---|---|
| AO3415A | 20V P-Channel MOSFET |
| AO3410 | N-Channel MOSFET |
| AO3413 | 20V P-Channel MOSFET |
| AO3414 | 20V N-Channel MOSFET |
| AO3414L | N-Channel MOSFET |
| AO3416 | 20V N-Channel MOSFET |
| AO3416L | N-Channel MOSFET |
| AO3418 | 30V N-Channel MOSFET |
| AO3419 | 20V P-Channel MOSFET |
| AO3400 | 30V N-Channel MOSFET |