Datasheet Details
| Part number | AO3419 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 332.59 KB |
| Description | 20V P-Channel MOSFET |
| Download | AO3419 Download (PDF) |
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| Part number | AO3419 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 332.59 KB |
| Description | 20V P-Channel MOSFET |
| Download | AO3419 Download (PDF) |
|
|
|
The AO3419 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.
This device is suitable for use as a load switch applications.
Product Summary VDS ID (at VGS=-10V) RDS(ON) (at VGS= -10V) RDS(ON) (at VGS= -4.5V) RDS(ON) (at VGS= -2.5V) Typical ESD protection -20V -3.5A < 85mΩ < 102mΩ < 140mΩ HBM Class 2 SOT23 Top View Bottom View D D D G S G S G S Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation B C Maximum -20 ±12 -3.5 -2.8 -17 1.4 0.9 -55 to 150 Units V V A VGS TA=25° C TA=70° C TA=25° C TA=70° C ID IDM PD TJ, TSTG W ° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 65 85 43 Max 90 125 60 Units ° C/W ° C/W ° C/W Rev 5: Nov 2011 www.aosmd.com Page 1 of 5 Free Datasheet http://www.datasheet4u.com/ AO3419 Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=-250µA, VGS=0V VDS=-20V, VGS=0V C TJ=55° VDS=0V, VGS= ±12V VDS=VGS, ID=-250µΑ VGS=-4.5V, VDS=-5V VGS=-10V, ID=-3.5A TJ=125° C RDS(ON) Static Drain-Source On-Resistance VGS=-4.5V, ID=-3A VGS=-2.5V, ID=-1A VGS=-1.8V, ID=-0.5A gFS VSD IS Forward Transconductance Diode Forward Voltage VDS=-5V, ID=-3.5A IS=-1A,VGS=0V -0.5 -17 71 99 85 112 168 8.6 -0.76 -1 -1.5 250 VGS=0V, VDS=-10V, f=1MHz VGS=0V, VDS=0V, f=1MHz 40 22 325 63 37 11.2 3.1 VGS=-4.5V, VDS=-10V, ID=-3.5A 0.6 1.1 11 VGS=-10V, VDS=-10V, RL=2.8Ω, RGEN=3Ω IF=-3.5A, dI/dt=100A/µs 5.5 22 8 11 4.3 400 85 52 17 4.4 85 119 102 140 -0.85 Min -20 -1 -5 ±10 -1.2 Typ Max Units V µA µA V A mΩ mΩ mΩ mΩ S V A pF pF pF Ω nC nC nC ns ns ns ns ns nC STATIC PARAMETERS Drain-Source Breakdown Voltage B
AO3419 20V P-Channel MOSFET General.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
AO3419 | P-Channel Enhancement MOSFET | Kexin |
| Part Number | Description |
|---|---|
| AO3410 | N-Channel MOSFET |
| AO3413 | 20V P-Channel MOSFET |
| AO3414 | 20V N-Channel MOSFET |
| AO3414L | N-Channel MOSFET |
| AO3415 | 20V P-Channel MOSFET |
| AO3415A | 20V P-Channel MOSFET |
| AO3416 | 20V N-Channel MOSFET |
| AO3416L | N-Channel MOSFET |
| AO3418 | 30V N-Channel MOSFET |
| AO3400 | 30V N-Channel MOSFET |