Datasheet Details
| Part number | AO3423 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 355.96 KB |
| Description | 20V P-Channel MOSFET |
| Download | AO3423 Download (PDF) |
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| Part number | AO3423 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 355.96 KB |
| Description | 20V P-Channel MOSFET |
| Download | AO3423 Download (PDF) |
|
|
|
Product Summary The AO3423 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.
This device is suitable for use as a load switch applications.
VDS ID (at VGS=-10V) RDS(ON) (at VGS= -10V) RDS(ON) (at VGS= -4.5V) RDS(ON) (at VGS= -2.5V) Typical ESD protection -20V -2A < 92mW < 118mW < 166mW HBM Class 2 SOT23 Top View Bottom View D D D S G G S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TA=25°C TA=70°C ID Pulsed Drain Current C IDM TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum -20 ±12 -2 -2 -17 1.4 0.9 -55 to 150 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 65 85 Maximum Junction-to-Lead Steady-State RqJL 43 Max 90 125 60 Units V V A W °C Units °C/W °C/W °C/W Rev 5.1: December 2023 www.aosmd.com Page 1 of 5 AO3423 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=-250mA, VGS=0V -20 V IDSS Zero Gate Voltage Drain Current VDS=-20V, VGS=0V TJ=55°C -1 mA -5 IGSS Gate-Body leakage current VDS=0V, VGS= ±12V ±10 mA VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250mA -0.5 -0.85 -1.2 V ID(ON) On state drain current VGS=-4.5V, VDS=-5V -17 A RDS(ON) Static Drain-Source On-Resistance VGS=-10V, ID=-2A VGS=-4.5V, ID=-2A TJ=125°C 76 92 mW 99 119 94 118 mW VGS=-2.5V, ID=-1A 128 166 mW gFS Forward Transconductance VDS=-5V, ID=-2A 6.8 S VSD Diode Forward Voltage IS=-1A,VGS=0V -0.76 -1 V IS Maximum Body-Diode Continuous Current -1.5 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Tra
AO3423 20V P-Channel MOSFET General.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
AO3423 | P-Channel MOSFET | Kexin |
 |
AO3423 | P-Channel MOSFET | VBsemi |
|
AO3423-HF | P-Channel MOSFET | Kexin |
| Part Number | Description |
|---|---|
| AO3420 | N-Channel MOSFET |
| AO3421 | 30V P-Channel MOSFET |
| AO3421E | 30V P-Channel MOSFET |
| AO3422 | N-Channel MOSFET |
| AO3424 | 30V N-Channel MOSFET |
| AO3400 | 30V N-Channel MOSFET |
| AO3400A | 30V N-Channel MOSFET |
| AO3401 | 30V P-Channel MOSFET |
| AO3401A | 30V P-Channel MOSFET |
| AO3401L | P-Channel MOSFET |