Download the AO4430L datasheet PDF.
This datasheet also covers the AO4430 variant, as both devices belong to the same n-channel fet family and are provided as variant models within a single manufacturer datasheet.
General Description
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Key Features
VDS (V) = 30V ID = 18A RDS(ON) < 5.5mΩ (VGS = 10V) RDS(ON) < 7.5mΩ (VGS = 4.5V)
The AO4430 uses advanced trench technology to excellent RDS(ON), shoot-through immunity, body diode characteristics and ultra-low gate resistance. This device is ideally suited for use as a low side switch in Notebook CPU core power conversion. AO4430L (Green Product) is offered in a lead free package. D S S S G D D D D
G S
SOIC-8
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain.
Note: The manufacturer provides a single datasheet file (AO4430_AlphaOmegaSemiconductors.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for AO4430L (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
AO4430L. For precise diagrams, and layout, please refer to the original PDF.
Rev 1: June 2004 AO4430, AO4430L (Green Product) N-Channel Enhancement Mode Field Effect Transistor General Description www.DataSheet4U.com provide Features VDS (V) = 30V...
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General Description www.DataSheet4U.com provide Features VDS (V) = 30V ID = 18A RDS(ON) < 5.5mΩ (VGS = 10V) RDS(ON) < 7.5mΩ (VGS = 4.5V) The AO4430 uses advanced trench technology to excellent RDS(ON), shoot-through immunity, body diode characteristics and ultra-low gate resistance. This device is ideally suited for use as a low side switch in Notebook CPU core power conversion. AO4430L (Green Product) is offered in a lead free package. D S S S G D D D D G S SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drai
AO4430L Datasheet
