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AO4441 - 60V P-Channel MOSFET

General Description

The AO4441 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge.

This device is suitable for use as a load switch or in PWM applications.

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Full PDF Text Transcription for AO4441 (Reference)

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AO4441 60V P-Channel MOSFET General Description Product Summary The AO4441 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. Th...

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nology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS = -4.5V) -60V -4A < 100mW < 130mW SOIC-8 D Top View Bottom View D D D D G S S S PIN 1 G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Maximum Drain-Source Voltage VDS -60 Gate-Source Voltage VGS ±20 Continuous Drain Current A TA=25°C TA=70°C ID -4 -3.1 Pulsed Drain Current B IDM -20 TA=25°C Power Dissipation A TA=70°C PD 3.