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AO4453 Datasheet 12V P-Channel MOSFET

Manufacturer: Alpha & Omega Semiconductors

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General Description

The AO4453 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).

This device is ideal for load switch and battery protection applications.

Product Summary VDS ID (at VGS=-4.5V) RDS(ON) (at VGS =-4.5V) RDS(ON) (at VGS =-3.3V) RDS(ON) (at VGS =-2.5V) RDS(ON) (at VGS =-1.8V) RDS(ON) (at VGS =-1.5V) 100% UIS Tested 100% Rg Tested -12V -9A < 19mΩ < 22mΩ < 26mΩ < 36mΩ < 50mΩ SOIC-8 Top View D D D D G G S S S Bottom View D S Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C C TA=25° Power Dissipation B TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead TA=25° C TA=70° C VGS ID IDM IAS EAS PD TJ, TSTG Maximum -12 ±8 -9 -7 -55 20 20 2.5 1.6 -55 to 150 Units V V A A mJ W ° C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 42 70 20 Max 50 85 30 Units ° C/W ° C/W ° C/W Rev 0: Oct.

Overview

AO4453 12V P-Channel MOSFET General.

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