Datasheet Details
| Part number | AO4455 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 2.19 MB |
| Description | 30V P-Channel MOSFET |
| Download | AO4455 Download (PDF) |
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| Part number | AO4455 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 2.19 MB |
| Description | 30V P-Channel MOSFET |
| Download | AO4455 Download (PDF) |
|
|
|
The AO4455 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating.
This device is suitable for use as a load switch or in PWM applications.
Product Summary VDS (V) = -30V ID = -17A RDS(ON) < 6.2mΩ RDS(ON) < 7.2mΩ ESD Protected 100% UIS tested 100% Rg tested (VGS = -20V) (VGS = -20V) (VGS = -10V) * RoHS and Halogen-Free Complaint SOIC-8 Top View D D D D Bottom View D G G S S S S Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Maximum -30 ±25 -17 -14 -182 3.1 2 -55 to 150 Units V V A Gate-Source Voltage Continuous Drain Current AF Pulsed Drain Current B TA=25° C Power Dissipation A TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient AF Maximum Junction-to-Ambient A Maximum Junction-to-Lead C TA=25° C TA=70° C VGS ID IDM PD TJ, TSTG W ° C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 26 50 14 Max 40 75 24 Units ° C/W ° C/W ° C/W Rev.1.0: July 2013 www.aosmd.com Page 1 of 5 Free Datasheet http://www.datasheet4u.com/ AO4455 Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=-250µA, VGS=0V VDS=-30V, VGS=0V TJ=55° C VDS=0V, VGS=±20V VDS=0V, VGS=±25V VDS=VGS ID=-250µA VGS=-20V, ID=-15A RDS(ON) Static Drain-Source On-Resistance TJ=125° C VGS=-10V, ID=-15A VGS=-6V, ID=-10A gFS VSD IS Forward Transconductance Diode Forward Voltage VDS=-5V, ID=-15A IS=-1A,VGS=0V -1.5 -2.1 5 7.2 5.7 7.4 48 -0.7 -1 -4.2 2823 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 2.1 574 424 4.0 54 VGS=-10V, VDS=-15V, ID=-15A 9 16 12.5 Min -30 Typ Max Units V STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS IGSS VGS(th) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage -1 -5 ±1 ±10 -2.6 6.2 9 7.2 9.5 µA µA µA V mΩ mΩ mΩ S V A pF pF pF Ω n
NTQtu5[PgPQlSł www.whxpcb.com AO4455 30V P-Channel MOSFET General.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
AO4455 | P-Channel MOSFET | Kexin |
| Part Number | Description |
|---|---|
| AO4450 | 40V N-Channel MOSFET |
| AO4451 | P-Channel MOSFET |
| AO4452 | 100V N-Channel MOSFET |
| AO4453 | 12V P-Channel MOSFET |
| AO4454 | 100V N-Channel MOSFET |
| AO4456 | N-Channel MOSFET |
| AO4458 | N-Channel Enhancement Mode Field Effect Transistor |
| AO4459 | 30V P-Channel MOSFET |
| AO4400 | N-Channel MOSFET |
| AO4401 | P-Channel MOSFET |