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AO4614A - MOSFET

Description

The AO4614A uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.

The complementary MOSFETs may be used in H-bridge, Inverters and other applications.

specifications).

Features

  • n-channel VDS (V) = 40V ID = 6A (VGS=10V) RDS(ON) < 31mΩ (VGS=10V) < 45mΩ (VGS=4.5V) p-channel -40V -5A (VGS = -10V) RDS(ON) < 45mΩ (VGS = -10V) < 63mΩ (VGS = -4.5V) S2 1 8 D2 G2 2 7 D2 S1 3 6 D1 G1 4 5 D1 SOIC-8 D2 D1 G2 S2 G1 S1 n-channel p-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max n-channel Drain-Source Voltage VDS 40 Gate-Source Voltage VGS ±20 Continuous Drain TA=25°C Current A TA=70°C Pulsed Drain Current B ID IDM 6 5 20 Pow.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AO4614A Complementary Enhancement Mode Field Effect Transistor General Description The AO4614A uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. Standard Product AO4614A is Pb-free (meets ROHS & Sony 259 specifications). Features n-channel VDS (V) = 40V ID = 6A (VGS=10V) RDS(ON) < 31mΩ (VGS=10V) < 45mΩ (VGS=4.5V) p-channel -40V -5A (VGS = -10V) RDS(ON) < 45mΩ (VGS = -10V) < 63mΩ (VGS = -4.
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