Datasheet Details
| Part number | AO4801A |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 286.74 KB |
| Description | 30V P-Channel MOSFET |
| Download | AO4801A Download (PDF) |
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| Part number | AO4801A |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 286.74 KB |
| Description | 30V P-Channel MOSFET |
| Download | AO4801A Download (PDF) |
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|
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Product Summary The AO4801A combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).This device is suitable for use as a load switch or in PWM applications.
VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS =-4.5V) RDS(ON) (at VGS =-2.5V) 100% UIS Tested 100% Rg Tested -30V -5A < 48mΩ < 57mΩ < 80mΩ SOIC-8 D1 Top View Bottom View SOIC-8 Top View S2 1 8 D2 G2 2 7 D2 S1 3 6 D1 G1 G1 4 5 D1 Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C ID IDM IAS, IAR EAS, EAR TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum -30 ±12 -5 -4 -28 17 14 2 1.3 -55 to 150 G2 S1 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RθJA 48 74 Maximum Junction-to-Lead Steady-State RθJL 32 Max 62.5 90 40 D2 S2 Units V V A A mJ W °C Units °C/W °C/W °C/W Rev 3: Mar.
2011 www.aosmd.com Page 1 of 5 AO4801A Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=-250µA, VGS=0V VDS=-30V, VGS=0V IGSS VGS(th) ID(ON) Gate-Body leakage current Gate Threshold Voltage On state drain current VDS=0V, VGS= ±12V VDS=VGS ID=-250µA VGS=-4.5V, VDS=-5V VGS=-10V, ID=-5A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=-4.5V, ID=-3.5A VGS=-2.5V, ID=-2.5A Forward Transconductance VDS=-5V, ID=-5A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current -30 TJ=55°C -0.5 -28 TJ=125°C V -1 µA -5 ±100 nA -0.9 -1.3 V A 40 48 mΩ 60 72 45 57 mΩ 60 80 mΩ 18 S
AO4801A 30V P-Channel MOSFET General.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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AO4801 | Dual P-Channel MOSFET | Kexin |
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AO4801 | Dual P-Channel 30V MOSFET | VBsemi |
| Part Number | Description |
|---|---|
| AO4801 | Dual P-Channel MOSFET |
| AO4800 | 30V Dual N-Channel MOSFET |
| AO4800B | 30V Dual N-Channel MOSFET |
| AO4800BL | Dual N-Channel MOSFET |
| AO4802 | Dual N-Channel MOSFET |
| AO4802L | Dual N-Channel MOSFET |
| AO4803 | Dual P-Channel MOSFET |
| AO4803A | 30V Dual P-Channel MOSFET |
| AO4805 | 30V Dual P-Channel MOSFET |
| AO4806 | 20V Dual N-Channel MOSFET |