The AO4806 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
They offer operation over a wide gate drive range from 1.8V to 12V.
It is ESD protected.
| Part number | AO4806 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 364.34 KB |
| Description | 20V Dual N-Channel MOSFET |
| Datasheet |
 AO4806 Datasheet
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| Part Number | Description | Manufacturer |
|---|---|---|
| AO4806 | Dual N-Channel MOSFET | Kexin |
| AO4800 | Dual N-Channel 30V MOSFET | VBsemi |
| AO4801 | Dual P-Channel MOSFET | Kexin |
| AO4801 | Dual P-Channel 30V MOSFET | VBsemi |
| AO4803A | Dual P-Channel MOSFET | Kexin |
| Part Number | Description |
|---|---|
| AO4800 | 30V Dual N-Channel MOSFET |
| AO4800B | 30V Dual N-Channel MOSFET |
| AO4800BL | Dual N-Channel MOSFET |
| AO4801 | Dual P-Channel MOSFET |
| AO4801A | 30V P-Channel MOSFET |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.
