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AO4806 - 20V Dual N-Channel MOSFET

Datasheet Summary

Description

The AO4806 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

They offer operation over a wide gate drive range from 1.8V to 12V.

It is ESD protected.

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Datasheet preview – AO4806

Datasheet Details

Part number AO4806
Manufacturer Alpha & Omega Semiconductors
File Size 364.34 KB
Description 20V Dual N-Channel MOSFET
Datasheet download datasheet AO4806 Datasheet
Additional preview pages of the AO4806 datasheet.

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Full PDF Text Transcription

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AO4806 20V Dual N-Channel MOSFET General Description The AO4806 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. They offer operation over a wide gate drive range from 1.8V to 12V. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration. Product Summary VDS (V) = 20V ID = 9.4A (VGS = 10V) RDS(ON) < 14mW (VGS = 10V) RDS(ON) < 15mW (VGS = 4.5V) RDS(ON) < 21mW (VGS = 2.5V) RDS(ON) < 30mW (VGS = 1.
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