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AO4930 - Dual N-Channel Enhancement Mode Field Effect Transistor

General Description

The AO4930 uses advanced trench technology to provide excellent R DS(ON) and low gate charge.

The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters.

Key Features

  • FET1 VDS (V) = 30V ID = 9.5A RDS(ON) < 13.5mΩ RDS(ON) < 16mΩ FET2 V DS(V) = 30V I D=9A (V GS = 10V).

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Full PDF Text Transcription for AO4930 (Reference)

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SRFET AO4930 Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor TM General Description The AO4930 uses advanced trench technology to provide excellent R D...

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on The AO4930 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A monolithically integrated Schottky diode in www.DataSheet4U.com parallel with the synchronous MOSFET to boost efficiency further. Standard Product AO4930 is Pb-free (meets ROHS & Sony 259 specifications). Features FET1 VDS (V) = 30V ID = 9.5A RDS(ON) < 13.5mΩ RDS(ON) < 16mΩ FET2 V DS(V) = 30V I D=9A (V GS = 10V) <15.8mΩ (V GS = 10V) <23mΩ (V GS = 4.

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VBsemi Logo AO4930 30V Dual N-Channel MOSFET VBsemi

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