AOB430 Datasheet N-Channel FET

Manufacturer: Alpha & Omega Semiconductors

Datasheet Details

The AOB430 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

This device is suitable for use in high voltage synchronous rectification , load switching and general purpose applications.

Standard product AOB430 is Pb-free (meets ROHS & Sony 259 specifications).

www.DataSheet4U.com AOB430 N-Channel Enhancement Mode Field Effect.

VDS (V) = 60V ID = 12A (Vgs=10V) RDS(ON) < 63 mΩ (VGS =10V) RDS(ON) < 85 mΩ (VGS = 6V) TO-263 D2-PAK D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Avalanche Current C C C Maximum 60 ±20 12 12 30 12 23 50 25 2 1.3 -55 to 175 Units V V A A mJ W W °C TC=25°C TC=100°C ID IDM IAR EAR PD PDSM TJ, TSTG TC=25°C Repetitive avalan.