Datasheet Details
| Part number | AOD11S60 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 394.70 KB |
| Description | Power Transistor |
| Datasheet | AOD11S60-AlphaOmegaSemiconductors.pdf |
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Overview: AOD11S60/AOI11S60 600V 11A α MOS TM Power Transistor General.
| Part number | AOD11S60 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 394.70 KB |
| Description | Power Transistor |
| Datasheet | AOD11S60-AlphaOmegaSemiconductors.pdf |
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Product Summary The AOD11S60 & AOI11S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications.
By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.
VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 100% UIS Tested 100% Rg Tested 700V 45A 0.399Ω 11nC 2.7µJ Top View TO252 DPAK Bottom View D D Top View TO251A IPAK Bottom View S G AOD11S60 G S S D G G D S G AOI11S60 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC=25°C TC=100°C ID Pulsed Drain Current C IDM Avalanche Current C IAR Repetitive avalanche energy C EAR Single pulsed avalanche energy H EAS TC=25°C Power Dissipation B Derate above 25oC PD MOSFET dv/dt ruggedness Peak diode recovery dv/dt dv/dt Junction and Storage Temperature Range TJ, TSTG Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds K TL Thermal Characteristics Parameter Symbol Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Maximum Junction-to-CaseD,F RθJA RθCS RθJC Maximum 600 ±30 11 8.5 45 2 60 120 208 1.67 100 20 -55 to 150 300 Typical 45 -0.45 Maximum 55 0.5 0.6 D S Units V V A A mJ mJ W W/ oC V/ns °C °C Units °C/W °C/W °C/W Rev3: Jan 2012 www.aosmd.com Page 1 of 7 AOD11S60/AOI11S60 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V, TJ=25°C ID=250µA, VGS=0V, TJ=150°C IDSS Zero Gate Voltage Drain Current VDS=600V, VGS=0V VDS=480V, TJ=150°C IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V,ID=250µA RDS(ON) Static
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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