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Alpha & Omega Semiconductors

AOD408 Datasheet Preview

AOD408 Datasheet

N-Channel MOSFET

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AOD408
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOD408 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in
PWM applications. Standard Product AOD408 is Pb-
free (meets ROHS & Sony 259 specifications).
AOD408L is a Green Product ordering option.
AOD408 and AOD408L are electrically identical.
Features
VDS (V) = 30V
ID = 18A (VGS = 10V)
RDS(ON) < 18m(VGS = 10V)
RDS(ON) < 27m(VGS = 4.5V)
TO-252
D-PAK
Top View
Drain Connected
to Tab
GD S
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy L=0.1mH C
ID
IDM
IAR
EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range TJ, TSTG
Maximum
30
±20
18
18
40
18
40
60
30
2.5
1.6
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Case B
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
16.7
40
1.9
Max
25
50
2.5
Alpha & Omega Semiconductor, Ltd.
Units
V
V
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W




Alpha & Omega Semiconductors

AOD408 Datasheet Preview

AOD408 Datasheet

N-Channel MOSFET

No Preview Available !

AOD408
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
VDS=24V, VGS=0V
IGSS
VGS(th)
ID(ON)
RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
VDS=0V, VGS= ±20V
VDS=VGS ID=250µA
VGS=4.5V, VDS=5V
VGS=10V, ID=18A
VGS=4.5V, ID=10A
Forward Transconductance
VDS=5V, ID=18A
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
30
1
40
1
5
100
1.8 2.5
13.6
18
20.6
25
0.75
18
24
27
1
18
V
µA
nA
V
A
m
m
S
V
A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
1040
180
110
0.7
1250
0.85
pF
pF
pF
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs Gate Source Charge
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time
Qrr Body Diode Reverse Recovery Charge
VGS=10V, VDS=15V, ID=18A
VGS=10V, VDS=15V, RL=0.82,
RGEN=3
IF=18A, dI/dt=100A/µs
IF=18A, dI/dt=100A/µs
19.8
9.8
2.5
3.5
4.5
3.9
17.4
3.2
19
8
25
12.5
25
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power
dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's
specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve
provides a single pulse rating.
G. The maximum current rating is limited by bond-wires.
Rev 3: June 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.



Part Number AOD408
Description N-Channel MOSFET
Maker Alpha & Omega Semiconductors
Total Page 4 Pages
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AOD408 Datasheet PDF





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