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AOD408 - N-Channel MOSFET

Description

The AOD408 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

This device is suitable for use as a load switch or in PWM applications.

Standard Product AOD408 is Pbfree (meets ROHS & Sony 259 specifications).

Features

  • VDS (V) = 30V ID = 18A (VGS = 10V) RDS(ON) < 18mΩ (VGS = 10V) RDS(ON) < 27mΩ (VGS = 4.5V) TO-252 D-PAK D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Maximum VDS 30 Drain-Source Voltage VGS ±20 Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH TC=25°C Power Dissipation Power Dissipation B C Units V V A A mJ W W °C TC=25°C TC=100°C C 18 ID IDM IAR EA.

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www.DataSheet4U.com AOD408 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD408 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AOD408 is Pbfree (meets ROHS & Sony 259 specifications). AOD408L is a Green Product ordering option. AOD408 and AOD408L are electrically identical. Features VDS (V) = 30V ID = 18A (VGS = 10V) RDS(ON) < 18mΩ (VGS = 10V) RDS(ON) < 27mΩ (VGS = 4.
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