AOD408 - N-Channel MOSFET

Alpha & Omega Semiconductors

Datasheet Details

The AOD408 uses advanced trench technology to provide excellent RDS(ON) and low gate charge..

VDS (V) = 30V ID = 18A (VGS = 10V) RDS(ON) < 18mΩ (VGS = 10V) RDS(ON) < 27mΩ (VGS = 4.5V) TO-252 D-PAK D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Maximum VDS 30 Drain-Source Voltage VGS ±20 Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH TC=25°C Power Dissipation Power Dissipation B C Units V V A A mJ W W °C TC=25°C TC=100°C C 18 ID IDM IAR EA.

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