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AOD422 - N-Channel MOSFET

Description

The AOD422 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.

This device is suitable for use as a load switch or in PWM applications.

It is ESD protected.

Features

  • VDS (V) = 20V ID = 10 A RDS(ON) < 22mΩ (VGS = 4.5V) RDS(ON) < 26mΩ (VGS = 2.5V) RDS(ON) < 34mΩ (VGS = 1.8V) ESD Rating: 2000V HBM TO-252 D-PAK D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy L=0.1mH TC=25°C Power Dissipation B C Maximum 20 ±8 10 10 30 15 26 50 20 2.5 1.6 -55.

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Other Datasheets by Alpha & Omega Semiconductors

Part Number Description
AOD420 N-Channel MOSFET
AOD421 P-Channel MOSFET
AOD423 P-Channel MOSFET
AOD424 20V N-Channel MOSFET
AOD424G N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com Rev 2: Sep 2004 AOD422, AOD422L (Green Product) N-Channel Enhancement Mode Field Effect Transistor General Description The AOD422 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. AOD422L (Green Product) is offered in a Lead Free package. Features VDS (V) = 20V ID = 10 A RDS(ON) < 22mΩ (VGS = 4.5V) RDS(ON) < 26mΩ (VGS = 2.5V) RDS(ON) < 34mΩ (VGS = 1.
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