Datasheet Details
| Part number | AOD442G |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 349.74 KB |
| Description | N-Channel MOSFET |
| Datasheet | AOD442G-AlphaOmegaSemiconductors.pdf |
|
|
Overview: AOD442G 60V N-Channel MOSFET General.
| Part number | AOD442G |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 349.74 KB |
| Description | N-Channel MOSFET |
| Datasheet | AOD442G-AlphaOmegaSemiconductors.pdf |
|
|
|
• Trench Power MV MOSFET technology • Low RDS(ON) • Logic Level Driving • RoHS and Halogen-Free Compliant Applications • Industrial and Motor Drive applications Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 100% UIS Tested 100% Rg Tested 60V 40A < 18mΩ < 23mΩ TO252 DPAK D Top View Bottom View D D S G G S G S Orderable Part Number AOD442G Package Type TO-252 Form Tape & Reel Minimum Order Quantity 2500 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.1mH C EAS TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 60 ±20 40 25.5 90 13 10.5 30 45 60 24 6.2 4.0 -55 to 150 Units V V A A A mJ W W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RθJA 15 40 Maximum Junction-to-Case Steady-State RθJC 1.7 Max 20 50 2.1 Units °C/W °C/W °C/W Rev.1.0: October 2017 www.aosmd.com Page 1 of 6 AOD442G Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 60 IDSS Zero Gate Voltage Drain Current VDS=60V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA 1.5 VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A, VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfe
Compare AOD442G distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
AOD442G | N-Channel MOSFET | INCHANGE |
|
AOD442 | N-Channel MOSFET | INCHANGE |
 |
AOD442 | N-Channel MOSFET | VBsemi |
| Part Number | Description |
|---|---|
| AOD442 | 60V N-Channel MOSFET |
| AOD444 | 60V N-Channel MOSFET |
| AOD4454 | 150V N-Channel MOSFET |
| AOD446 | N-Channel MOSFET |
| AOD448 | N-Channel MOSFET |
| AOD400 | N-Channel MOSFET |
| AOD402 | N-Channel MOSFET |
| AOD403 | 30V P-Channel MOSFET |
| AOD404 | N-Channel MOSFET |
| AOD405 | P-Channel MOSFET |