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AON6992
30V Dual Asymmetric N-Channel MOSFET
General Description
• Trench Power αMOS Technology • Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant
Product Summary
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V)
Q1 30V 50A < 5.2mΩ < 8.6mΩ
Q2 30V 85A < 2mΩ < 2.