Datasheet Details
| Part number | AON7422 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 160.19 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet | AON7422_AlphaOmegaSemiconductors.pdf |
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Overview: www.DataSheet.co.kr AON7422 N-Channel Enhancement Mode Field Effect.
| Part number | AON7422 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 160.19 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet | AON7422_AlphaOmegaSemiconductors.pdf |
|
|
|
The AON7422 uses advanced trench technology to provide excellent RDS(ON) with low gate charge.
This device is ideal for load switch and battery protection applications.
Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 30V 32A < 4.6mΩ < 6mΩ 100% UIS Tested 100% Rg Tested DFN 3x3 Top View Bottom View D Top View S S S G D D D D Pin 1 G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Continuous Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH C TC=25°C Power Dissipation B Power Dissipation A TC=100°C TA=25°C TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case C Maximum 30 ±20 32 25 150 15 11 47 110 35 14 1.7 1 -55 to 150 Units V V A TC=25°C TC=100°C TA=25°C TA=70°C ID IDM IDSM IAR EAR PD PDSM TJ, TSTG A A mJ W W °C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 30 60 3 Max 40 75 3.5 Units °C/W °C/W °C/W Rev 0: February 2009 www.aosmd.com Page 1 of 6 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr AON7422 Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=4.5V, ID=20A Forward Transconductance VDS=5V, ID=20A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current 1900 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 260 150 0.5 35 VGS=10V, VDS=15V, ID=20A 16 5.6 5.4 VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω IF=20A, dI/dt=500A/µs 9 21 Conditions ID=250µA, VGS=0V VDS=3
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