Datasheet Details
| Part number | AON7423 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 349.30 KB |
| Description | 20V P-Channel MOSFET |
| Datasheet | AON7423_AlphaOmegaSemiconductors.pdf |
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Overview: www.DataSheet.co.kr AON7423 20V P-Channel MOSFET General.
| Part number | AON7423 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 349.30 KB |
| Description | 20V P-Channel MOSFET |
| Datasheet | AON7423_AlphaOmegaSemiconductors.pdf |
|
|
|
The AON7423 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).
This device is ideal for load switch and battery protection applications.
Product Summary VDS ID (at VGS=-4.5V) RDS(ON) (at VGS=-4.5V) RDS(ON) (at VGS=-2.5V) RDS(ON) (at VGS=-1.8V) RDS(ON) (at VGS=-1.5V) 100% UIS Tested 100% Rg Tested -20V -50A < 5mΩ < 6.5mΩ < 8.5mΩ < 11mΩ Top View DFN 3.3x3.3 EP Bottom View D Top View 1 2 3 4 8 7 6 5 G S Pin 1 Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Continuous Drain Current Avalanche Current C Avalanche energy L=0.1mH C TC=25° C Power Dissipation B Power Dissipation A TC=100° C TA=25° C TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case C Maximum -20 ±8 -50 -39 -200 -28 -22.5 60 180 83 33 6.2 4 -55 to 150 Units V V A VGS TC=25° C TC=100° C TA=25° C TA=70° C ID IDM IDSM IAS, IAR EAS, EAR PD PDSM TJ, TSTG A A mJ W W ° C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 16 45 1.1 Max 20 55 1.5 Units ° C/W ° C/W ° C/W Rev 0: Nov.
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