Datasheet Details
| Part number | AON7424 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 297.88 KB |
| Description | 30V P-Channel MOSFET |
| Datasheet | AON7424_AlphaOmegaSemiconductors.pdf |
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Overview: www.DataSheet.co.kr AON7424 30V N-Channel MOSFET General.
| Part number | AON7424 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 297.88 KB |
| Description | 30V P-Channel MOSFET |
| Datasheet | AON7424_AlphaOmegaSemiconductors.pdf |
|
|
|
The AON7424 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).
This device is ideal for load switch and battery protection applications.
Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 30V 40A < 5.2mΩ < 7.5mΩ ESD protected 100% UIS Tested 100% Rg Tested Top View DFN 3x3 EP Bottom View D Top View 1 2 3 4 8 7 6 5 G Pin 1 S Absolute Maximum Ratings TA=25° C unless otherwise noted Symbol Parameter Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain CurrentG Pulsed Drain Current Continuous Drain Current Avalanche Current C Avalanche energy L=0.1mH C TC=25° C Power Dissipation B Power Dissipation A TC=100° C TA=25° C TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case C Maximum 30 ±20 40 31 140 18 15 45 101 36 14 3.1 2 -55 to 150 Units V V A VGS TC=25° C C TC=100° TA=25° C TA=70° C ID IDM IDSM IAS, IAR EAS, EAR PD PDSM TJ, TSTG A A mJ W W ° C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 30 60 2.8 Max 40 75 3.4 Units ° C/W ° C/W ° C/W Rev 1: Mar 2010 www.aosmd.com Page 1 of 6 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr AON7424 Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=30V, VGS=0V C TJ=55° VDS=0V, VGS= ±20V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=20A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=20A Forward Transconductance Diode Forward Voltage VDS=5V, ID=20A IS=1A,VGS=0V TJ=125° C 1.3 140 4.3 6.6 6 55 0.7 1 40 2280 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 280 180 0.8 40 VGS=10V, VDS=15V, ID=20A 17 8 5 VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω IF=20A, dI/dt=500A/µs 10 22 2860 405 300 1.6 50 22 9.8 8.4 7 12 36 10 13 28 16 34 3450 530 420 2.5 60 2
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