Datasheet Details
| Part number | AON7428 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 222.22 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet | AON7428_AlphaOmegaSemiconductors.pdf |
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Overview: www.DataSheet.co.kr AON7428 30V N-Channel MOSFET General.
| Part number | AON7428 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 222.22 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet | AON7428_AlphaOmegaSemiconductors.pdf |
|
|
|
The AON7428 uses advanced trench technology to provide excellent RDS(ON) with low gate charge.
This device is ideal for load switch and battery protection applications.
Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 30V 50A < 2.8mΩ < 3.6mΩ 100% UIS Tested 100% Rg Tested Top View DFN 3.3x3.3 EP Bottom 1 2 3 4 D Top View 8 7 6 5 G S Pin 1 Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain CurrentG Pulsed Drain Current Continuous Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH C TC=25° C Power Dissipation B C Maximum 30 ±20 50 39 250 34 27 50 125 83 33 6.2 4 -55 to 150 Units V V A VGS TC=25° C TC=100° C TA=25° C C TA=70° ID IDM IDSM IAR, IAS EAR, EAS PD PDSM TJ, TSTG A A mJ W W ° C TC=100° C TA=25° C TA=70° C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 16 45 1.1 Max 20 55 1.5 Units ° C/W ° C/W ° C/W Rev 2: April 2011 www.aosmd.com Page 1 of 6 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr AON7428 Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=30V, VGS=0V TJ=55° C VDS=0V, VGS= ±20V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=20A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=20A Forward Transconductance Diode Forward Voltage VDS=5V, ID=20A IS=1A,VGS=0V TJ=125° C 1.1 250 2.3 3.8 2.9 100 0.7 1 50 2080 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 300 170 1.7 40 VGS=10V, VDS=15V, ID=20A 20 8 5 VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω IF=20A, dI/dt=500A/µs 14 30 2600 430 280 3.5 49 24 10 8 7 10 58 20 18 37 22 45 3120 560 390 5 60 30 12 11 2.8 4.6 3.6 1.7 Min
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