Datasheet Details
| Part number | AONR21117 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 322.43 KB |
| Description | 20V P-Channel MOSFET |
| Datasheet | AONR21117-AlphaOmegaSemiconductors.pdf |
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Overview: AONR21117 20V P-Channel MOSFET General.
| Part number | AONR21117 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 322.43 KB |
| Description | 20V P-Channel MOSFET |
| Datasheet | AONR21117-AlphaOmegaSemiconductors.pdf |
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• Latest advanced trench technology • Low RDS(ON) • High Current Capability • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=-4.5V) RDS(ON) (at VGS=-4.5V) RDS(ON) (at VGS=-2.5V) -20V -34A < 4.8mΩ < 7.2mΩ Applications • Load switch application • Battery protection application 100% UIS Tested 100% Rg Tested DFN3x3A_8L_EP1_P Top View Bottom View Top View D Pin 1 PIN1 S1 S2 S3 G4 8D 7D 6D 5D G S Orderable Part Number AONR21117 Package Type DFN 3x3 EP Form Tape & Reel Minimum Order Quantity 5000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.1mH C EAS TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum -20 ±8 -34 -34 -136 -26.5 -21 50 125 43 17 5.0 3.2 -55 to 150 Units V V A A A mJ W W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 20 45 Maximum Junction-to-Case Steady-State RqJC 2.4 Max 25 55 2.9 Units °C/W °C/W °C/W Rev.1.2: March 2019 www.aosmd.com Page 1 of 6 AONR21117 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=-250mA, VGS=0V -20 IDSS Zero Gate Voltage Drain Current VDS=-20V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±8V VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250mA -0.3 VGS=-4.5V, ID=-20A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=-2.5V, ID=-20A gFS Forward Transconductance VDS=-5V, ID=-20A VSD Diode Forward Voltage IS=-1A, VGS=0V IS Maximum Body-Diode Continuous Cur
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