Datasheet Details
| Part number | AONS21303C |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 414.15 KB |
| Description | 30V P-Channel MOSFET |
| Datasheet | AONS21303C-AlphaOmegaSemiconductors.pdf |
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Overview: AONS21303C 30V P-Channel MOSFET General.
| Part number | AONS21303C |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 414.15 KB |
| Description | 30V P-Channel MOSFET |
| Datasheet | AONS21303C-AlphaOmegaSemiconductors.pdf |
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• Latest advanced trench technology • Low RDS(ON) • High Current Capability • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS=-4.5V) -30V -180A < 2.8mΩ < 4mΩ Applications • Notebook AC-in load switch • Battery protection charge/discharge 100% UIS Tested 100% Rg Tested DFN5X6 Top View Bottom View Top View D PIN1 S1 S2 S3 G4 PIN1 8D 7D 6D 5D G S Orderable Part Number AONS21303C Package Type DFN 5x6 Form Tape & Reel Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.1mH C EAS TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum -30 ±20 -180 -110 -350 -38 -31 80 320 138 55 6.2 4 -55 to 150 Units V V A A A mJ W W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s 15 Maximum Junction-to-Ambient A D Steady-State RqJA 40 Maximum Junction-to-Case Steady-State RqJC 0.6 Max 20 50 0.9 Units °C/W °C/W °C/W Rev.2.1: November 2023 www.aosmd.com Page 1 of 6 AONS21303C Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS IDSS IGSS VGS(th) RDS(ON) gFS VSD IS Drain-Source Breakdown Voltage ID=-250mA, VGS=0V -30 Zero Gate Voltage Drain Current VDS=-30V, VGS=0V TJ=55°C Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=-250mA -1.3 VGS=-10V, ID=-20A Static Drain-Source On-Resistance TJ=125°C VGS=-4.5V, ID=-20A Forward Transconductance VDS=-5V, ID=-20A Diode Forward Voltage IS=-1A, VGS=0V Maximum Body-Diode Continuous Current
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