Datasheet Details
| Part number | AONV125A60 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 491.18 KB |
| Description | N-Channel Power Transistor |
| Datasheet | AONV125A60-AlphaOmegaSemiconductors.pdf |
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Overview: AONV125A60 600V, a MOS5 TM N-Channel Power Transistor General.
| Part number | AONV125A60 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 491.18 KB |
| Description | N-Channel Power Transistor |
| Datasheet | AONV125A60-AlphaOmegaSemiconductors.pdf |
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• Proprietary aMOS5TM technology • Low RDS(ON) • Optimized switching parameters for better EMI performance • Enhanced body diode for robustness and fast reverse recovery Applications • PFC and PWM stages (LLC, FSFB,TTF) of Server, Telecom, Industrial, UPS, and Solar Inverters Product Summary VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 100% UIS Tested 100% Rg Tested 700V 100A < 0.125Ω 44nC 6.3mJ DFN8X8 D Top View Bottom View D Pin1:G AONV125A60 G S S Pin2: Driver Source G S Driver Source Orderable Part Number AONV125A60 Package Type DFN8x8_4L_EP1_S Form Tape & Reel Minimum Order Quantity 3500 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Gate-Source Voltage (dynamic) AC( f>1Hz) Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Continuous Drain TA=25°C Current TA=70°C Avalanche Current C L=1mH Repetitive avalanche energy C Single pulsed avalanche energy G MOSFET dv/dt ruggedness Diode reverse recovery VDS=0 to 400V,IF<=14A,Tj=25°C VGS ID IDM IDSM IAR EAR EAS dv/dt dv/dt di/dt Power Dissipation B TC=25°C Derate above 25°C PD Power Dissipation A TA=25°C TA=70°C PDSM Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TJ, TSTG TL Maximum 600 ±20 ±30 28 18 100 4.9 3.9 14 98 555 100 20 300 312 2.5 8.3 5.3 -55 to 150 300 Units V V V A A A mJ mJ V/ns V/ns A/us W W/°C W W/°C °C °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RqJA RqJC Typ 12 40 0.24 Max 15 50 0.4 Units °C/W °C/W °C/W Rev.1.1: March 2024 www.aosmd.com Page 1 of 6 AONV125A60 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS
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