Datasheet4U Logo Datasheet4U.com

AOP600 - MOSFET

Description

The AOP600 uses advanced trench technology to provide excellent R DS(ON) and low gate charge.

The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications.

Standard Product AOP600 is Pb-free (meets ROHS & Sony 259 specifications).

Features

  • n-channel p-channel -30V VDS (V) = 30V ID = 7.5A (V GS = 10V) -6.6A RDS(ON) < 28m Ω < 35m Ω (VGS = -10V) < 43m Ω < 58m Ω (VGS =- 4.5V) D2 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 D1 G2 S2 G1 S1 PDIP-8 n-channel p-channel Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 30 VGS Gate-Source Voltage ±20 Continuous Drain Current A Pulsed Drain Current Power Dissipation B Max p-channel -30 ±20 -6.6 -5.3 -30 2.5 1.6 -55 to 150 Uni.

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com AOP600 Complementary Enhancement Mode Field Effect Transistor General Description The AOP600 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. Standard Product AOP600 is Pb-free (meets ROHS & Sony 259 specifications). AOP600L is a Green Product ordering option. AOP600 and AOP600L are electrically identical. Features n-channel p-channel -30V VDS (V) = 30V ID = 7.5A (V GS = 10V) -6.6A RDS(ON) < 28m Ω < 35m Ω (VGS = -10V) < 43m Ω < 58m Ω (VGS =- 4.
Published: |