AOP605L Datasheet MOSFET

Manufacturer: Alpha & Omega Semiconductors

Overview: AOP605 Complementary Enhancement Mode Field Effect Transistor.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Part number	AOP605L
Manufacturer	Alpha & Omega Semiconductors
File Size	575.25 KB
Description	MOSFET
Datasheet	AOP605L AOP605 Datasheet (PDF)

General Description

The AOP605/L uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications.

AOP605 and AOP605L are electrically identical.

Key Features

n-channel VDS (V) = 30V ID = 7.5A (VGS = 10V) p-channel -30V -6.6A (VGS = -10V) RDS(ON) < 28mΩ (VGS = 10V) < 35mΩ (VGS = -10V) < 43mΩ (VGS = 4.5V) < 58mΩ (VGS = -4.5V) PDIP8 Top View Bottom View S2 1 8 D2 G2 2 7 D2 S1 3 6 D1 G1 4 5 D1 PDIP-8 D2 G2 S2 n-channel D1 G1 S1 p-channel Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Symbol Max n-channel Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain TA=25°C 7.5 Current A TA=70°C ID.

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