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AOP609 - MOSFET

General Description

The AOP609 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.

The complementary MOSFETs may be used in H-bridge, Inverters and other applications.

Standard Product AOP609 is Pbfree (meets ROHS & Sony 259 specifications).

Key Features

  • n-channel p-channel -60V VDS (V) = 60V ID = 4.7A (VGS=10V) -3.5A (VGS=-10V) RDS(ON) RDS(ON) < 60m Ω (VGS=10V) < 115mΩ (VGS =-10V) < 75m Ω (VGS=4.5V) < 140mΩ (VGS =-4.5V) ESD Rating: 1500V HBM 3000V HMB D2 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 D1 G2 S2 G1 S1 PDIP-8 n-channel p-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 60 Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation B M.

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Full PDF Text Transcription for AOP609 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for AOP609. For precise diagrams, tables, and layout, please refer to the original PDF.

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www.DataSheet4U.com AOP609 Complementary Enhancement Mode Field Effect Transistor General Description The AOP609 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. Standard Product AOP609 is Pbfree (meets ROHS & Sony 259 specifications). AOP609L is a Green Product ordering option. AOP609 and AOP609L are electrically identical. Features n-channel p-channel -60V VDS (V) = 60V ID = 4.7A (VGS=10V) -3.5A (VGS=-10V) RDS(ON) RDS(ON) < 60m Ω (VGS=10V) < 115mΩ (VGS =-10V) < 75m Ω (VGS=4.5V) < 140mΩ (VGS =-4.