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AOP611 - MOSFET

Description

The AOP611 uses advanced trench technology MOSFETs to provide excellen RDS(ON) and low gate charge.

The complementary MOSFETs may be used in H-bridge, Inverters and other applications.

Standard Product AOP611 is Pb-free (meets ROHS & Sony 259 specifications).

Features

  • n-channel VDS (V) = 40V ID = 6.5A (VGS=10V) RDS(ON) < 35mΩ (VGS=10V) < 47mΩ (VGS=4.5V) p-channel -40V -5.5A (VGS = -10V) RDS(ON) < 52mΩ (VGS = -10V) < 80mΩ (VGS = -4.5V) ESD rating: 3000V (HBM) UIS TESTED! Rg,Ciss,Coss,Crss Tested D2 D1 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G2 G1 S2 S1 PDIP-8 n-channel p-channel Max p-channel -40 ±20 -5.5 -4.4 -25 2.5 1.6 17 43 -55 to 150 A Units V V Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-.

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www.DataSheet4U.com AOP611 Complementary Enhancement Mode Field Effect Transistor General Description The AOP611 uses advanced trench technology MOSFETs to provide excellen RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. Standard Product AOP611 is Pb-free (meets ROHS & Sony 259 specifications). AOP611L is a Green Product ordering option. AOP611 and AOP611L are electrically identical. Features n-channel VDS (V) = 40V ID = 6.5A (VGS=10V) RDS(ON) < 35mΩ (VGS=10V) < 47mΩ (VGS=4.5V) p-channel -40V -5.5A (VGS = -10V) RDS(ON) < 52mΩ (VGS = -10V) < 80mΩ (VGS = -4.
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