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Alpha & Omega Semiconductors

AOTF2210L Datasheet Preview

AOTF2210L Datasheet

N-Channel MOSFET

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AOTF2210L
200V N-Channel MOSFET
General Description
• Trench Power MV MOSFET technology
• Low RDS(ON)
• Low Gate Charge
• Optimized for fast-switching applications
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS=5V)
Applications
• Synchronous Rectification in DC/DC and AC/DC Converters
• Industrial and Motor Drive applications
100% UIS Tested
100% Rg Tested
Top View
TO220F
Bottom View
200V
13A
< 90mΩ
< 106mΩ
D
G DS
S DG
Orderable Part Number
AOTF2210L
Package Type
TO-220F
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
Current
TC=25°C
TC=100°C
ID
Pulsed Drain Current C
IDM
Continuous Drain
Current
TA=25°C
TA=70°C
IDSM
Avalanche Current C
IAS
Avalanche energy L=0.1mH C
EAS
VDS Spike
Power Dissipation B
10µs
TC=25°C
TC=100°C
VSPIKE
PD
Power Dissipation A
TA=25°C
TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient A t ≤ 10s
Maximum Junction-to-Ambient A D Steady-State
RθJA
10
45
Maximum Junction-to-Case
Steady-State
RθJC
3.4
G
Form
Tube
S
Minimum Order Quantity
1000
Maximum
200
±20
13
9
45
6.5
5.0
9
4
240
36.5
18
8.3
5.3
-55 to 175
Units
V
V
A
A
A
mJ
V
W
W
°C
Max
Units
15
°C/W
55
°C/W
4.1
°C/W
Rev.1.0: November 2014
www.aosmd.com
Page 1 of 6




Alpha & Omega Semiconductors

AOTF2210L Datasheet Preview

AOTF2210L Datasheet

N-Channel MOSFET

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Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
STATIC PARAMETERS
BVDSS
IDSS
IGSS
VGS(th)
RDS(ON)
gFS
VSD
IS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
VDS=200V, VGS=0V
Gate-Body leakage current
Gate Threshold Voltage
Static Drain-Source On-Resistance
VDS=0V, VGS=±20V
VDS=VGS, ID=250µA
VGS=10V, ID=13A
Forward Transconductance
Diode Forward Voltage
VGS=5V, ID=11A
VDS=5V, ID=13A
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
200
TJ=55°C
1.5
TJ=125°C
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=100V, f=1MHz
f=1MHz
1.1
SWITCHING PARAMETERS
Qg(10V)
Qg(4.5V)
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Total Gate Charge
Total Gate Charge
Gate Source Charge
VGS=10V, VDS=100V, ID=13A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=100V, RL=7.7,
RGEN=3
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=13A, dI/dt=500A/µs
Body Diode Reverse Recovery Charge IF=13A, dI/dt=500A/µs
Typ
2.0
74
146
83
50
0.7
2065
74
3.8
2.2
27
12
7
3
8
10
30
4
60
800
Max Units
V
1
µA
5
±100 nA
2.5
V
90
mΩ
178
106 mΩ
S
1
V
14
A
pF
pF
pF
3.3
40
nC
20
nC
nC
nC
ns
ns
ns
ns
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=175°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: November 2014
www.aosmd.com
Page 2 of 6



Part Number AOTF2210L
Description N-Channel MOSFET
Maker Alpha & Omega Semiconductors
Total Page 3 Pages
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