BLF10M6LS200 Overview
200 W LDMOS power transistor for ISM applications at frequencies from 700 MHz to 1000 MHz. Typical performance Typical RF performance at Tcase = 25 C in a mon source class-AB production test circuit. Test signal f VDS PL(AV) Gp D ACPR (MHz) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 869 to 894 28 40 20 28.5 39[1] [1] Test signal:.
BLF10M6LS200 Key Features
- Easy power control
- Integrated ESD protection
- Excellent ruggedness
- High efficiency
- Excellent thermal stability
- Designed for broadband operation (700 MHz to 1000 MHz)
- Internally matched for ease of use
- pliant to Directive 2002/95/EC, regarding restriction of hazardous substances
