BLF189XRB transistor equivalent, power ldmos transistor.
* Easy power control
* Integrated dual sided ESD protection enables class C operation and complete switch
off of the transistor
* Excellent ruggedness VSWR > .
in the HF to 150 MHz band.
Table 1. Application information
Test signal
f
(MHz)
pulsed RF
108
VDS
PL
(V) (W)
5.
A 1900 W extremely rugged LDMOS power transistor for industrial pulsed applications in the HF to 150 MHz band.
Table 1. Application information
Test signal
f
(MHz)
pulsed RF
108
VDS
PL
(V) (W)
50 1900
Gp (dB) 26
D (%) 72.5
1.2 Features .
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