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BLF189XRB; BLF189XRBS
Power LDMOS transistor
Rev. 1 — 3 October 2017
Product data sheet
1. Product profile
1.1 General description
A 1900 W extremely rugged LDMOS power transistor for industrial pulsed applications in the HF to 150 MHz band.
Table 1. Application information
Test signal
f
(MHz)
pulsed RF
108
VDS
PL
(V) (W)
50 1900
Gp (dB) 26
D (%) 72.5
1.2 Features and benefits
Easy power control Integrated dual sided ESD protection enables class C operation and complete switch
off of the transistor Excellent ruggedness VSWR > 65 : 1 High efficiency Excellent thermal stability Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.
BLF189XRBS Datasheet
