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BLF7G10LS-250, BLF7G10L-250 Datasheet - Ampleon

BLF7G10LS-250 Power LDMOS transistor

250 W LDMOS power transistor for base station applications at frequencies from 869 MHz to 960 MHz. Table 1. Typical performance Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier spacing = 5 MHz. Typical RF performance at Tcase = 25 C. Test s.

BLF7G10LS-250 Features

* Excellent ruggedness

* High efficiency

* Low thermal resistance providing excellent thermal stability

* Designed for broadband operation (869 MHz to 960 MHz)

* Lower output capacitance for impro

BLF7G10LS-250, BLF7G10L-250 Datasheet

This datasheet PDF includes multiple part numbers: BLF7G10LS-250, BLF7G10L-250. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

BLF7G10LS-250, BLF7G10L-250

Manufacturer:

Ampleon

File Size:

403.59 KB

Description:

Power ldmos transistor.

This datasheet PDF includes multiple part numbers: BLF7G10LS-250, BLF7G10L-250.
Please refer to the document for exact specifications by model.

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TAGS

BLF7G10LS-250 BLF7G10L-250 Power LDMOS transistor Ampleon

BLF7G10LS-250 Distributor