Datasheet Specifications
- Part number
- BLF7G20L-160P
- Manufacturer
- NXP ↗
- File Size
- 128.75 KB
- Datasheet
- BLF7G20L-160P_PhilipsSemiconductors.pdf
- Description
- Power LDMOS transistor
Description
www.DataSheet4U.com BLF7G20L-160P; BLF7G20LS-160P Power LDMOS transistor Rev.01 * 22 June 2010 Objective data sheet 1.Product profile 1.1 .Features
* Excellent ruggedness High efficiency Low Rth providing excellent thermal stability Designed for broadband operation (1800 MHz to 2000 MHz) Lower output capacitance for improved performance in Doherty applicatioApplications
* at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation CW GSM EDGE f (MHz) 1805 to 1880 1805 to 1880 IDq (mA) 850 850 VDS (V) 28 28 PL(AV) (W) 135 65 Gp (dB) 17.5 18.5 ηD (%BLF7G20L-160P Distributors
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