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BLF7G20LS-200, BLF7G20L-200 Power LDMOS transistor

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Description

BLF7G20L-200; BLF7G20LS-200 Power LDMOS transistor Rev.5 * 1 September 2015 Product data sheet 1.Product profile 1.1 General .
200 W LDMOS power transistor for base station applications at frequencies from 1805 MHz to 1990 MHz.

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This datasheet PDF includes multiple part numbers: BLF7G20LS-200, BLF7G20L-200. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
BLF7G20LS-200, BLF7G20L-200
Manufacturer
Ampleon
File Size
382.82 KB
Datasheet
BLF7G20L-200-Ampleon.pdf
Description
Power LDMOS transistor
Note
This datasheet PDF includes multiple part numbers: BLF7G20LS-200, BLF7G20L-200.
Please refer to the document for exact specifications by model.

Features

* Excellent ruggedness
* High efficiency
* Low Rth providing excellent thermal stability
* Designed for broadband operation (1805 MHz to 1990 MHz)

Applications

* at frequencies from 1805 MHz to 1990 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f IDq VDS PL(AV) Gp D ACPR (MHz) (mA) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 1805 to 1880 1620 28 55

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