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BLF7G20LS-200

Power LDMOS transistor

BLF7G20LS-200 Features

* Excellent ruggedness

* High efficiency

* Low Rth providing excellent thermal stability

* Designed for broadband operation (1805 MHz to 1990 MHz)

* Lower output capacitance for improved performance in Doherty applications

* Designed for low-memory effects providing excellent

BLF7G20LS-200 General Description

200 W LDMOS power transistor for base station applications at frequencies from 1805 MHz to 1990 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f IDq VDS PL(AV) Gp D ACPR (MHz) (mA) (V) (W) (.

BLF7G20LS-200 Datasheet (382.82 KB)

Preview of BLF7G20LS-200 PDF

Datasheet Details

Part number:

BLF7G20LS-200

Manufacturer:

Ampleon

File Size:

382.82 KB

Description:

Power ldmos transistor.

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TAGS

BLF7G20LS-200 Power LDMOS transistor Ampleon

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