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BLF7G22LS-250P, BLF7G22L-250P Datasheet - NXP

BLF7G22LS-250P Power LDMOS transistor

250 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f (MHz) 2110 to 2170 IDq (mA) 1900 .

BLF7G22LS-250P Features

* Excellent ruggedness High efficiency Low Rth providing excellent thermal stability Designed for broadband operation (2110 MHz to 2170 MHz) Lower output capacitance for improved performance in Doherty applicatio

BLF7G22L-250P_PhilipsSemiconductors.pdf

This datasheet PDF includes multiple part numbers: BLF7G22LS-250P, BLF7G22L-250P. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

BLF7G22LS-250P, BLF7G22L-250P

Manufacturer:

NXP ↗

File Size:

128.56 KB

Description:

Power ldmos transistor.

Note:

This datasheet PDF includes multiple part numbers: BLF7G22LS-250P, BLF7G22L-250P.
Please refer to the document for exact specifications by model.

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TAGS

BLF7G22LS-250P BLF7G22L-250P Power LDMOS transistor NXP

BLF7G22LS-250P Distributor