BLF7G22LS-250P, BLF7G22L-250P Power LDMOS transistor

NXP

Description

www.DataSheet4U.com BLF7G22L-250P; BLF7G22LS-250P Power LDMOS transistor Rev.01 * 6 May 2010 Objective data sheet 1.Product profile 1.1 Ge.
250 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz.

📥 Download Datasheet

BLF7G22LS-250P Datasheet Preview — This datasheet PDF includes multiple part numbers: BLF7G22LS-250P, BLF7G22L-250P. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: BLF7G22LS-250P, BLF7G22L-250P
Manufacturer: NXP ↗
File Size: 128.56 KB
Datasheet: BLF7G22L-250P_PhilipsSemiconductors.pdf
Description: Power LDMOS transistor
Note: This datasheet PDF includes multiple part numbers: BLF7G22LS-250P, BLF7G22L-250P.
Please refer to the document for exact specifications by model.

Features

* Excellent ruggedness High efficiency Low Rth providing excellent thermal stability Designed for broadband operation (2110 MHz to 2170 MHz) Lower output capacitance for improved performance in Doherty applicatio

Applications

* at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f (MHz) 2110 to 2170 IDq (mA) 1900 VDS (V) 28 PL(AV) (W) 70 Gp (dB) 18 ηD (%) 30 ACPR (dBc

BLF7G22LS-250P Distributors

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BLF7G22L-250P Power LDMOS transistor NXP

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