Description
BLF7G22L-200; BLF7G22LS-200 Power LDMOS transistor Rev.5 * 1 September 2015 Product data sheet 1.Product profile 1.1 General .
200 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz.
Features
* Excellent ruggedness
* High efficiency
* Low Rth providing excellent thermal stability
* Designed for low memory effects providing excellent pre-distortability
* Internally matched for ease of use
* Integrated ESD protection
* Compliant to Directive 2002/95/EC, regardin
Applications
* at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance
Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation
f
IDq
VDS PL(AV) Gp
D
ACPR
(MHz)
(mA) (V) (W)
(dB) (%)
(dBc)
2-carrier W-CDMA
2110 to 2170 1620 28 55
