BLF7G22LS-200, BLF7G22L-200 Datasheet - Ampleon

BLF7G22LS-200 Power LDMOS transistor

200 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f IDq VDS PL(AV) Gp D ACPR (MHz) (mA) (V) (W) (.

BLF7G22LS-200 Features

* Excellent ruggedness

* High efficiency

* Low Rth providing excellent thermal stability

* Designed for low memory effects providing excellent pre-distortability

* Internally matched for ease of use

* Integrated ESD protection

* Compliant to Directive 2002/95/EC, regardin

BLF7G22L-200-Ampleon.pdf

BLF7G22LS-200 Datasheet Preview — This datasheet PDF includes multiple part numbers: BLF7G22LS-200, BLF7G22L-200. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

BLF7G22LS-200, BLF7G22L-200

Manufacturer:

Ampleon

File Size:

409.14 KB

Description:

Power ldmos transistor.

Note:

This datasheet PDF includes multiple part numbers: BLF7G22LS-200, BLF7G22L-200.
Please refer to the document for exact specifications by model.

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BLF7G22LS-200 BLF7G22L-200 Power LDMOS transistor Ampleon

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