Datasheet Details
Part number:
BLF7G22LS-200, BLF7G22L-200
Manufacturer:
Ampleon
File Size:
409.14 KB
Description:
Power ldmos transistor.
Note:
This datasheet PDF includes multiple part numbers: BLF7G22LS-200, BLF7G22L-200.
Please refer to the document for exact specifications by model.
BLF7G22LS-200, BLF7G22L-200, Power LDMOS transistor
200 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz.
Table 1.
Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
Mode of operation f IDq VDS PL(AV) Gp D ACPR (MHz) (mA) (V) (W) (
BLF7G22LS-200 Features
* Excellent ruggedness
* High efficiency
* Low Rth providing excellent thermal stability
* Designed for low memory effects providing excellent pre-distortability
* Internally matched for ease of use
* Integrated ESD protection
* Compliant to Directive 2002/95/EC, regardin
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